EFFECT OF RAPID THERMAL ANNEALING TREATMENT ON THE ELECTRICAL CONDUCTIVITY OF NANOCRYSTALLINE ZINC OXIDE DOPED WITH ALUMINUM

Effect of Rapid Thermal Annealing on Conductivity of AZO

Authors

  • Peerawoot Rattanawichai School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
  • Thipwan Fangsuwannarak School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
  • Karoon Fangsuwannarak School of Mechanical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
  • Supanut Laohawiroj School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima
  • Warakorn Limsiri School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand.
  • Duangkamon Prasertdee School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand.
  • Sukamai Rattanatham School of Electrical Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
  • Rungrueang Phatthanakun BL6a: Deep X-ray Lithography, Synchrotron Light Research Institute (Public Organization), Nakhon Ratchasima, 30000, Thailand

DOI:

https://doi.org/10.55766/sujst9269

Keywords:

AZO, Rapid thermal annealing, Electron transport layer, Conductive improvement, Spherical nanocrystalline zinc oxide

Abstract

Spherical nanocrystalline aluminum-doped zinc oxide (nc-AZO) has shown an improvement in conductivity and optical properties under rapid thermal annealing (RTA) treatment. The typical treatment at 500℃ for 1 h. on nc-AZO provides low electrical conductivity and low photocurrent, whereas RTA treatment performs better properties with above 85% optical transmittance and higher electrical conductivity. The diameter size of nano-spherical nc-AZO is around at 10-30 nm providing the energy band gap between 3.2 eV and 3.4 eV. Thus, the high electrical and optical qualities of such nc-AZO films can be required for an electron transport layer and transparent contact electrodes for semiconductor devices.

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Published

2025-04-01

How to Cite

Rattanawichai, P., Fangsuwannarak, T., Fangsuwannarak, K., Laohawiroj, S., Limsiri, W., Prasertdee, D., Rattanatham, S., & Phatthanakun, R. (2025). EFFECT OF RAPID THERMAL ANNEALING TREATMENT ON THE ELECTRICAL CONDUCTIVITY OF NANOCRYSTALLINE ZINC OXIDE DOPED WITH ALUMINUM: Effect of Rapid Thermal Annealing on Conductivity of AZO. Suranaree Journal of Science and Technology, 32(1), 030278(1–10). https://doi.org/10.55766/sujst9269

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Review Article