THE STUDY OF ZINC OXIDE WITH SILICON DOTS THIN FILMS FABRICATED BY SPIN COATING TECHNIQUE FOR APPLYING AS EMITTER LAYER
Silicon Dots Thin Films Fabricated by Spin Coating for Emitter Layer
DOI:
https://doi.org/10.55766/sujst9095Keywords:
Zinc oxide doped aluminum, Zinc oxide doped bismuth, Silicon powder, Thin filmAbstract
A low-cost spin coating technique and rapid thermal annealing method have been utilized for the preparation of aluminum doped zinc oxide with Si dots thin film on the quartz substrates compared with zinc oxide doped bismuth thin film with low-temperature annealing. The dispersed Si dots particle in the film showed that these additional Si dots can be tunable material for light absorption applied in photovoltaic work. X-ray diffraction was used to study the nanocrystalline silicon and zinc oxide with the crystal grain size of ~100 and ~20 nm presented in the films, respectively. The optical result of the thin films shows that <20% of reflectance and >80% transmittance were presented in the film. The absorption edge of thin films that have occupied Si dots was expanded from the original zinc oxide which strongly absorbs UV wavelength (~380 nm) to near-infrared wavelength (~800 nm) depending on the amount of Si dots layer. For the electrical properties of the film, the two-probe method was used to observe the photocurrent gain under the illumination compared with the dark test and showed that the film can greatly respond to the light and provided a higher current density. Additionally, the increase in annealing temperature and amount of zinc oxide layer leads to the enchantment of the current density. Hence, these zinc oxide thin films can be an alternative candidate for the tunable absorption emitter layer of solar cells and can be applied for other optoelectronic devices.
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