INFLUENCE OF N2 FLOW RATE ON THE PROPERTIES OF VANADIUM NITRIDE THIN FILMS DEPOSITED BY REACTIVE DC MAGNETRON SPUTTERING

Authors

  • Jedsada Prathumsit Physics Program, Faculty of Science and Technology, Phranakhon Rajabhat University, Bangkok 10220, Thailand.
  • Wuttichai Phae-ngam Physics Program, Faculty of Science and Technology, Phranakhon Rajabhat University, Bangkok 10220, Thailand.
  • Tanapoj Chaikeeree Department of Electrical Technology Education, Faculty of Industrial Education and Technology, King Mongkut’s University of Technology Thonburi, Bangkok, 10140, Thailand.
  • Narong Mungkung Department of Electrical Technology Education, Faculty of Industrial Education and Technology, King Mongkut’s University of Technology Thonburi, Bangkok, 10140, Thailand.
  • Tossaporn Lertvanithphol Opto-Electrochemical Sensing Research Team, National Electronics and Computer Technology Center, Pathum Thani, 12120, Thailand.
  • Mati Horprathum Opto-Electrochemical Sensing Research Team, National Electronics and Computer Technology Center, Pathum Thani, 12120, Thailand.
  • Ganatee Gitgeatpong Opto-Electrochemical Sensing Research Team, National Electronics and Computer Technology Center, Pathum Thani, 12120, Thailand.

DOI:

https://doi.org/10.55766/sujst-2023-04-e02237

Keywords:

Reactive DC magnetron sputtering, thin film, vanadium nitride

Abstract

Vanadium nitride (VN) thin films have been deposited on silicon wafer substrates by reactive DC magnetron sputtering with varied nitrogen (N2) flow rates from 5.0 to 8.0 sccm without substrate heating. The crystallinity, morphology, and optical properties of the prepared VN films were investigated by gracing-incidence X-ray diffraction (GIXRD), field emission scanning electron microscope (FE-SEM), and UV-Vis-NIR spectrophotometer, respectively. The GIXRD pattern shows that the crystal structure of the films is consistent with the face-centered cubic VN structure. An increase in N2 led to a decrease in film thickness and sheet resistance. On the contrary, the reflectance percentage tends to increase with the increase of N2 flow rate. [Copyright information to be updated in the production process].

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Published

2023-10-09

How to Cite

Prathumsit, J., Phae-ngam, W., Chaikeeree, T., Mungkung, N., Lertvanithphol, T., Horprathum, M., & Gitgeatpong, G. (2023). INFLUENCE OF N2 FLOW RATE ON THE PROPERTIES OF VANADIUM NITRIDE THIN FILMS DEPOSITED BY REACTIVE DC MAGNETRON SPUTTERING. Suranaree Journal of Science and Technology, 30(4), 030125(1–5). https://doi.org/10.55766/sujst-2023-04-e02237

Issue

Vol. 30 No. 4 (2023): July-August

Section

Research Article

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