THE INFLUENCE OF SILICON ELEMENT-ADDED DLC FILM ON Ti-6Al-4V

Authors

  • Nutthanun Moolsradoo King Mongkut’s University of Technology Thonburi
  • Shuichi Watanabe Nippon Institute of Technology

DOI:

https://doi.org/10.55766/sujst-2023-02-e01607

Keywords:

DLC film, plasma-based ion implantation (PBII), Silicon element, Ti-6Al-4V

Abstract

Silicon added diamond-like carbon films fabricated from C2H2:TMS mixture were used to study the influence of silicon content on the deposition and tribological properties of films prepared on Ti-6Al-4V substrate by using plasma-based ion implantation (PBII). The structure of the film was analyzed by Raman spectroscopy. Hardness and elastic modulus of the film were measured by nano-indentation hardness tester. Tribological propertiesof the film were performed by using ball-on-disk friction tester. The results indicate that with the increasing silicon content in the pure DLC film, the friction coefficient increases. The hardness and elastic modulus of Si-DLC film can increase to a value of up to 31.1 GPa and 200.1 GPa with a silicon content of 13.1 at.%. This is because the greater C content. The Si-DLC films with Si content of 13.1 at.% (C:Si/1:2) and 14.3 at.% (C:Si/1:6) shows a low friction coefficient of 0.2, which is considerable improvement in the tribological properties. This is due to the high hardness and elastic modulus.

References

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Published

2023-06-29

How to Cite

Moolsradoo, N., & Watanabe, S. (2023). THE INFLUENCE OF SILICON ELEMENT-ADDED DLC FILM ON Ti-6Al-4V. Suranaree Journal of Science and Technology, 30(2), 010210(1–4). https://doi.org/10.55766/sujst-2023-02-e01607

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Section

Research Article