LASER TEXTURING PROCESS ON THE SURFACE PROPERTIES OF SILICON WAFER

Authors

  • Viboon Tangwarodomnukun Department of Production Engineering, King Mongkut’s University of Technology Thonburi, Bangkok, 10140, Thailand.
  • Nutthanun Moolsradoo Department of Production Technology Education, King Mongkut’s University of Technology Thonburi, Bangkok, 10140, Thailand.

Keywords:

Laser texturing, surface properties, silicon wafer, surface morphology, chemical composition

Abstract

A silicon wafer modification induced by laser texturing process was investigated in this paper to understand the influence of laser power and laser scanning speed on its surface characteristics. The morphology and chemical compositions of the wafer were observed and characterized by using the scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDS), respectively. The corrosion potential of laser-scanned wafer was assessed by using potentiodynamic polarization. In addition, the obtained surface roughness was measured by using a surface profiler. Ball-on-disk friction test was employed to quantify the friction coefficient of laser-textured surface. The results indicate that with the increasing laser power at scanning speeds of 10 mm/s, corrosion resistance increases. The laser power of 25 W shows the highest corrosion potential value (Ecorr) of -0.61 V, indicating good corrosion resistance property. Increasing laser power tends to increase surface roughness and the friction coefficient.

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Published

2026-08-28

How to Cite

Tangwarodomnukun, V., & Moolsradoo, N. (2026). LASER TEXTURING PROCESS ON THE SURFACE PROPERTIES OF SILICON WAFER. Suranaree Journal of Science and Technology, 29(1), 010103(1–6). retrieved from https://ph04.tci-thaijo.org/index.php/SUJST/article/view/15055

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Research Article