STUDY ON THE MOLECULAR BEAM EPITAXIAL GROWTH OF SnO2 ON Si (001) SUBSTRATE

Dechmongkhon  Kaewsuwan; Thipusa  Wongpinit; Chanan  Euaruksakul; Narong  Chanlek; Rattikorn  Yimnirun; Saroj  Rujirawat

Authors

Dechmongkhon Kaewsuwan School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand.
Thipusa Wongpinit Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand.
Chanan Euaruksakul Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand.
Narong Chanlek Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand.
Rattikorn Yimnirun School of Energy Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Payupnai, Wangchan, Rayong, 21210, Thailand.
Saroj Rujirawat Research Network NANOTEC-SUT on Advanced Nanomaterials and Characterization, School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand.

Keywords:

Tin dioxide, growth mechanism, LEEM, MBE, AFM

Abstract

This work reports the growth of tin dioxide (SnO2) on Si (001) substrate by molecular beam epitaxy (MBE) technique. The growth mechanism was investigated in-situ by low energy electron microscopy (LEEM). The chemical states and composition of the grown layers were confirmed by X-ray photoelectron spectroscopy (XPS). The morphology was also studied by atomic force microscopy (AFM). The result shows the morphology of grown layers as a particle of about 80 nm in diameter distributed on the substrate like the Volmer-Werber island growth mode. The result shows the possibility to create the island of tin oxide structures on the surface.

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