DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
Keywords:
Pt atom, Roentgen radiation, C-V characteristics, Power deviceAbstract
In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
References
Brorsson, C. (2011). PIN diode drive circuits optimized for fast switching, [MSc. thesis]. Department of Microwave Design Division of Microwave and Antennas Saab AB Electronic Defence Systems Mölndal, Sweden, 55p.
Gregory, B.L. and Gwyn, C.W. (1974). Radiation effects on semiconductor devices. In: Proc. IEEE, 62(9):1,264-1273.
De Keyser, R. and Donald, J. (1999). Model based predictive control in RTP semiconductor manufacturing. In: Proceedings of the 1999 IEEE International Conference on Control Applications (Cat. No.99CH36328), Kohala Coast, HI, USA, p. 1,636-1,641.
Barbarini, E., Guastella, S., and Pirri, C.F. (2010). Furnace annealing effects in the formation of titanium silicide Schottky barriers. In: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP), Gainesville, FL, USA, p. 119-122.
Sobhan, S. (2013). Effects of electron beam irradiation on the electrical properties of III-V semiconductor nanowires, [MSc thesis]. Department of Physics, Lund University, 71p.
Rosenfeld, A.B. (2011). Advanced Semiconductor dosimetry in radiation therapy. In: A. Rozenfeld (Eds.), Concepts and trends in medical radiation dosimetry, Melville, NY: American Institute of Physics, p. 48-74.
Schwarze, G.E. and Frasca, A.J. (1990). Neutron and gamma irradiation effects on power semiconductor switches. In: Proceedings of the 25th Intersociety Energy Conversion Engineering Conference, Reno, NV, USA, p. 30-35.
Vavilov, V.S. (1977). Radiation Effects in Semiconductors and Semiconductor Devices. 1st ed. Springer US, Consultants Bureau, NY, 280p.
Srithanachai, I., Ueamanapong, S., Niemcharoen, S., and Yupapin, P.P. (2012). Novel design of solar cell efficiency improvement using an embedded electron accelerator on-chip. Opt. Exp., 20(12): 12640-8.
Ueamanapong, S., Srithanachai, I., Niemcharoen, S., and Pupapin, P.P. (2012). High speed photodetector using accelerated particles controlled by light. J. Nonlin. Opt. Phys. Mater., 21(02):1250023.
Poret, S., Dony, R.D., and Gregori, S. (2009). Image processing for colour blindness correction. In: IEEE Toronto International Conference Science and Technology for Humanity (TIC-STH), Toronto, ON, Canada, p. 539-544.
Ohkubo, T. and Kobayashi, K. (2008). A color compensation vision system for color-blind people. In: 2008 SICE Annual Conference, Chofu, Japan, p. 1,286-1,289.
Plataniotis, K.N. and Vinetsanopoulos, A.N. (2000). Color Image Processing and Application. 1st ed. Springer-Verlag Berlin Heidelberg, 355p.








