EFFECTS OF GROUP III DOPANTS ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED ZnO THIN FILMS

Authors

  • Somtop Santibenchakul Department of Science and Mathematics, Faculty of Science and Technology, Rajamangala University of Technology Tawan-ok, Chonburi, 20110, Thailand.
  • Russameeruk Noonuruk Division of Physics, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Pathumthani, 12110, Thailand.
  • Kamonchanok Ruangon College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand.
  • Warut Khamon College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand.
  • Wisanu Pecharapa College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand.

Keywords:

Group III dopants, sol-gel, ZnO thin films

Abstract

In this research, the effect of group III dopants on the structural and optical properties of zinc oxide (ZnO) thin films was investigated. Undoped, Al-, Ga-, and In-doped ZnO thin films at a constant 3 at.% doping content were fabricated by the simple route of a sol-gel spin coating process followed by an annealing technique in an ambient pressure at 500C. Zinc acetate dihydrate ( Zn(CH3COO)22H2O), aluminum nitrate nonahydrate (Al(NO3)39H2O), gallium (III) nitrate hydrate (Ga(NO3)3xH2O), and indium (III) acetate (In(CH3COO)3) were used as the starting materials for Zn, Al, Ga, and In sources, respectively. The structural properties of undoped and group III-doped ZnO thin films agreed with the hexagonal wurtzite crystal structure. Moreover, incorporation of group III dopants into the ZnO lattice was able to decrease the grain size and deteriorate the crystallinity of the ZnO. The transmittance phenomena in the visible region of all thin films was shown to be higher than 92%. Furthermore, the optical band gap of ZnO doping with group III dopants is higher than for purified ZnO. In the same way, the morphology of ZnO has a sharp distinction with various types of group III dopants.

References

Chen, J., Chen, J., Chen, D., Zhou, Y., Li, W., Ren, Y., and Hu, L. (2014). Electrochemical deposition of Al-doped ZnO transparent conducting nanowire arrays for thin-film solar cell electrodes. Mater. Lett., 117:162-164.

Djessas, K., Bouchama, I., Gauffier, J.L., and Ayadi, Z.B. (2014). Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells. Thin Solid Films, 555:28-32.

Haga, K., Wijesena, P.S., and Watanabe, H. (2001). Group III impurity doped ZnO films prepared by atmospheric pressure chemical–vapor deposition using zinc acetylacetonate and oxygen. Appl. Surf. Sci., 169-170:504-507.

Her, S-C. and Chang, C-F. (2016). Effect of sputtering power on opitical and electrical properties on indium tin oxide films. Sensor. Mater., 28(9):975-981.

Hong, C-S., Park, H-H., Moon, J., and Park, H-H. (2006). Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films. Thin Solid Films, 515:957-960.

Jun, M-C., Park, S-U., and Koh, J-H. (2012). Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films. Nanoscale Res. Lett., 7:639.

Karakaya, S. and Ozbas, O. (2015). Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis. Appl. Surf. Sci., 328:177-182.

Khuili, M., Fazouan, N., El Makarim, H.A., El Halani, G., and Atmani, E.H. (2016). Comparative first principles study of ZnO doped with group III elements. J. Alloy. Compd., 688:368-375.

Look, D.C., Coskun, C., Claflin, B., and Farlow, G.C. (2003). Electrical and optical properties of defects and impurities in ZnO. Physica B, 340-342:32-38.

Muhammad, N.M., Duraisamy, N., Dang, H-W., Jo, J., and Choi, K-H. (2012). Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization. Thin Solid Films, 520:6,398-6,403.

Musat, V., Teixeira, B., Fortunato, E., Monteiro, R.C.C., and Vilarinho, P. (2004). Al-doped ZnO thin films by sol–gel method. Surf. Coat. Tech., 180-181:659-662.

Nunes, P., Fortunato, E., Tonello, P., Fernandes, F.B., Vilarinho, P., and Martins, R. (2002). Effect of different dopant elements on the properties of ZnO thin films. Vacuum, 64:281-285.

Paul, B., Singh, B., Ghosh, S., and Roy, A. (2016). A comparative study on electrical and optical properties of group III (Al, Ga, In) doped ZnO. Thin Solid Films, 603:21-28.

Sengupta, J., Sahoo, R.K., and Mukherjee, C.D. (2012). Effect of annealing on the structural, topographical and optical properties of sol-gel derived ZnO and AZO thin films. Mater. Lett., 83:84-87.

Sim, K.U., Shin, S.W., Moholkar, A.V., Yun, J.H., Moon, J.H., and Kim, J.H. (2010). Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system. Curr. Appl. Phys., 10:S463-S467.

Thambidurai, M., Kim, J.Y., Song, J., Ko, Y., Muthukumarasamy, N., Velauthapillai, D., and Lee, C. (2014). Nanocrystalline Ga-doped ZnO thin films for inverted polymer. Sol. Energy, 106:95-101.

Thanigainathan, P. and Paramasivan, C. (2013). Realization of ZnO/PVK transparent heterojunction by solution processing routes. International Nano Letters, 3:9.

von Wenckstern, H., Schmidt, H., Brandt, M., Lajn, A., Pickenhain, R., Lorenz, M., Grundmann, M., Hofmann, D.M., Polity, A., Meyer, B.K., Saal, H., Binnewies, M., Borger, A., Becker, K-D., Tikhomirov, V.A., and Jug, K. (2009). Anionic and cationic substitution in ZnO. Prog. Solid State Chem., 37:153-172.

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Published

2026-08-28

How to Cite

Santibenchakul, S., Noonuruk, R., Ruangon, K., Khamon, W., & Pecharapa, W. (2026). EFFECTS OF GROUP III DOPANTS ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED ZnO THIN FILMS. Suranaree Journal of Science and Technology, 26(1), 44–50. retrieved from https://ph04.tci-thaijo.org/index.php/SUJST/article/view/14540

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Research Article