THE EFFECT OF pH ADJUSTMENTS ON THE STRUCTURAL AND OPTICAL PROPERTIES OF CIAS THIN FILMS
Keywords:
Thin Films, X-ray Diffraction, Crystal structure, CBD (Chemical Bath Deposition), CIAS (Cu(InAl)Se2)Abstract
Cu(In1-xAlx)Se2 (CIAS) thin films were prepared by the economical chemical bath deposition (CBD)technique on well-cleaned glass substrates. Two different thickness films were prepared by varying the pH. The thickness of the films was measured by gravimetric technique. The structure, morphology, composition, and optical transition of the prepared films were determined. X-ray diffraction studies confirmed the polycrystalline nature of the thin films with a chalcopyrite structure. The structural parameter such as lattice constants, axial ratio, tetragonal distortion, crystallite size, dislocation density, and number of crystallites per unit area has also been evaluated.Scanning electron microscopy studies revealed that the morphology of the prepared films was smooth, dense, uniform, and granular. The composition of various constituents such as Cu, In, Al, and Se in the CIAS films has been determined from energy dispersive X-ray (EDX) analysis. The optical properties have been studied in detail from the transmittance spectra in the visible and nearinfra-red region and the optical transition has been found to be direct and allowed with the bandgap of around 1.4 eV Due to the pH adjustment, the changes in the preferential orientation on the structural properties and the band gap variation with respect to thickness on the optical properties have also been discussed.
References
Dhanam, M., Balasundarprabhu, R., Jayakumar,S., Gopalakrishnan, P., and Kannan,M.D. (2002). Preparation and study ofstructural and optical properties of chemical bath deposited copper indiumdiselenide thin films. Phys. Status Solidi. A., 19(1):149-160.
Dhanam, M., Jayakumar, S., and Kannan,M.D. (1998). Preparation and opticalcharacterisation of chemically depositedCuInSe2 thin films. B. Electrochem.,14(11):418-421.
Dhanam, M., Manoj, P.K., and Prabhu, R.R.(2005). High temperature conductivity in chemical bath deposited copper selenide thin films. J. Cryst. Growth,280:425-435.
Enriquez, J.P. and Mathew, X. (2003). Influence of the thickness on structural, optical and electrical properties of chemical bath deposited CdS thin films. Sol.Energ. Mat. Sol. C., 76:313-322.
Halgand, E., Bernede, J.C., Marsillac S., andKessler, J. (2005). Physico-chemical characterization of Cu(InAl)Se2 thin filmfor solar cells obtained by selenizationprocess. Thin Solids Films, 480-481:443-446
Itoch, E., Saitoh, O., Kita, M., Nagamori, H.,and Oike, H. (1998). Growth and characterization of Cu(InAl)Se2 by vacuum evaporation. Sol. Energ. Mat.Sol. C., 50:119.
Kazmerski, L.L., Ayyagari, M.S., Sanborn,G.A., White, F.R., and Merril, A.J.(1976). Electron and X-ray diffraction analyses of ternary compound (I–III–VI2) thin films. Thin Solid Films, 37:323-334.
Kazmerski, L.L., White, F.R., Ayyagari, M.S.,Juang, Y.J., and Patterson, R.P. (1977).Growth and characterization of thin-film compound semiconductor photovoltaicheterojunctions. J.Vac. Sci. Technol.,14:65-68.
Kuhaimi, S.A. (1998). Influence of preparation technique on the structural, optical and electrical properties of polycrystallineCdS films. Vacuum., 51:349-355.
Lalitha, S., Sathyamoorthy, R., Senthilarasu,S., Subbarayan, A., and Natarajan, K.(2004). Characterization of CdTe thinfilm—dependence of structural and optical properties on temperature and thickness. Solar energy. Materials and Solar Cells., 82:187.
Marsillac, S., Paulson, P.D., Haimbodi M.W.,and Shafar man, W.N. (2002). High efficiency solar cells based on Cu(InAl)Se2 thin films. Appl. Phys. Lett.. 81(7):1350-1352.
Park, J.W., Chung, G.Y., Ahn, B.T., Im, H.B.,and Song, J.S. (1994). Effect of hydrogen in the selenizing atmosphere on the properties of CuInSe2 thin films. ThinSolid Films, 245:174-179.
Paulson, P.D., Haimbodi, M.W., Marsillac, S.,Birkmire, R.W., and Shafarman, W.N.(2002). CuIn1-xAlSe2 thin films and solar cells. J. Appl. Phys., 91:10153-10156.
Prabahar, S. and Dhanam, M. (2005). CdSthin films from two different chemicalbaths–structural and optical analysis. J.Cryst. Growth, 285:41.
Prathap, P., Revathi, N., Venkata Subbaiah, Y.P.,and Ramakrishnan Reddy, K.T. (2008).Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films. J. Phys-Condensed Matter,20:35205#1.
Rakhshani, A.E. and Al.Azab, A.S. (2000).Characterization of CdS films preparedby chemical-bath deposition. J. Phys-Condensed Matter, 12:8745-8748.
Sadigov, M.S., Özkan, M., Bacaksiz, E.,Hunbas, M.A., and Kopya, A.I., (1999).Production of CuInSe2 thin films by a sequential processes of evaporation and salinization. J. Mater. Sci., 34:4579.
Shafarman, W.N., Klenk, R., and McCandless,B.E. (1996). Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap. J. Appl.Phys., 79:7324.
Srinivas, K., Kumar, J.N., Chandra, G.H., andUthanna, S. (2006). Structural and optical properties of CuIn0.35 Al0.65Se2thin films. J. Mater. Sci. : Mater Electron,17:1035–1039.
Varela, M., Bertran, E., Esteve, J., and Morenza,J.L. (1985). Crystalline properties of coevaporatedCuInSe2 thin films. Thin Solid Films, 130:155-164.








