SPRAY-PYROLYSIS ZnSe THIN FILMS WITH TUNABLE OPTOELECTRONIC PROPERTIES THROUGH BORON DOPING AND TEMPERATURE CONTROL
DOI:
https://doi.org/10.55766/sujst11606Keywords:
ZnSe thin films, Spray pyrolysis, Boron doping, bandgap, X-ray diffraction, SEMAbstract
Zinc selenide (ZnSe) is a wide-bandgap II – VI semiconductor with promising applications in photovoltaics, optoelectronics, and photonics. In this study, undoped and boron-doped ZnSe thin films were deposited via spray pyrolysis at substrate temperatures ranging from 250 to 450°C to evaluate the synergistic effects of temperature and dopant incorporation on structural, optical, morphological, and electrical properties. X-ray diffraction confirmed the cubic ZnSe phase with nanocrystalline features, and optimal crystallinity and preferred orientation were obtained at 0.3% B-doping. Optical analyses revealed strong ultraviolet absorption (<400 nm), with transmittance increasing up to 54% at 450°C and a systematic bandgap widening from 3.64 to 3.75 eV, attributed to improved crystallinity and reduced defect density at elevated growth temperatures. Reflectance values remained below 4% across all films, with an exceptionally low value of 0.1% at 350°C, underscoring their potential for antireflection coatings. SEM analysis showed distinct morphology transitions from flower-like structures in undoped films to compact agglomerates upon boron incorporation, enhancing film density. Hall effect measurements indicated that mobility increased with temperature and was further modulated by boron doping, with a balance achieved between conductivity and transparency.
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Copyright (c) 2026 Qasim Abolanle Adeniji, Kazeem Olukunle Rauff, Rasaq Bello, Jamiu Ariyo Rabiu, Ayoola Olumide Abe, Warith Adebisi, Muhammad Aliyu Salihu, Daniel Owoicho Alfred, Surajudeen Otolowo Azeez, Khadijat Kuburat Babalola, Ayobamidele Dele Adelaja, Taiwo Temitope Adeojo, Rukayat Odunola Opatokun-Saliu, Olumuyiwa Femi Adewumi, Temitope Olasile Fowodu, Muhammad Mukhtar Danladi
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