RECENT ADVANCES IN HFO2-BASED FERROELECTRIC FIELD - EFFECT TRANSISTORS: MATERIALS, INTERFACES, ARCHITECTURES, AND RELIABILITY - A REVIEW
DOI:
https://doi.org/10.55766/sujst11268Keywords:
HfO2, FeFET, Endurance, Polarization, ComputingAbstract
HfO2-based ferroelectric field-effect transistors have emerged as promising candidates for scalable, CMOS-compatible non-volatile memory devices. This review provides an overview of recent progress in the field, highlighting advances in materials, processing, and device engineering. Studies on doped and undoped HfO2 thin films are surveyed, with comparisons of deposition methods such as atomic layer deposition and sputtering, as well as dopant strategies and interface engineering approaches. The influence of processing parameters, annealing conditions, and electrode choice on the stabilization of metastable orthorhombic phases and resulting ferroelectric properties is critically analyzed. While significant improvements in polarization, switching speed, and endurance have been achieved, challenges such as wake-up and fatigue effects, defect-induced degradation, and maintaining uniform performance at sub-10 nm dimensions remain unresolved. Importantly, interface and electrode engineering are shown to play key roles in enhancing device retention and endurance. By summarizing both the successes and persistent challenges, this review provides a succinct reference for researchers and highlights potential future directions, including 3D integration, variability control, and applications in neuromorphic computing.
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