Hot carrier effects on real and imaginary parts of Brillouin susceptibilities of semiconductor magneto-plasmas

Pinki Kumari; B.S. Sharma

Authors

Pinki Kumari Department of Physics, Lords University, Chikani, Alwar – 301028 (Rajasthan) India
B.S. Sharma Department of Physics, Lords University, Chikani, Alwar – 301028 (Rajasthan) India

Keywords:

Brillouin susceptibility, hot carrier effects, laser-plasma interactions, magnetic field, semiconductor magneto-plasmas

Abstract

An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility (Re (c_B), Im (c_B)) of semiconductor magneto-plasmas. Coupled mode approach is used to obtain expressions for (Re (c_B) and Im (c_B)). Numerical calculations are made for n–InSb crystal – CO₂ laser system. Efforts are made to obtain enhanced values of (Re (c_B) and Im (c_B))as well as change of their sign under appropriate selection of external magnetic field (B₀) and doping concentration (n₀). The hot carrier effects of intense laser radiation modifies the momentum transfer collision frequency of carriers and consequently the nonlinearity of the medium, which in turn (i) further enhances (Re (c_B) and Im (c_B)), (ii) shifts the enhanced (Re (c_B) and Im (c_B)) towards smaller values of B₀, and (iii) widens the range of B₀ at which change of sign of (Re (c_B) and Im (c_B)) occur. The change of sign of enhanced (Re (c_B) and Im (c_B)) of semiconductor magneto-plasmas validates the possibility of chosen Brillouin medium as a potential candidate material for the fabrication of stimulated Brillouin scattering dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters.

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