SANGWARANATEE, N.; SRITHANACHAI, I.; NIEMCHAROEN, S. DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE. Suranaree Journal of Science and Technology, [S. l.], v. 28, n. 1, p. 030038(1–4), 2026. Disponível em: https://ph04.tci-thaijo.org/index.php/SUJST/article/view/14866. Acesso em: 16 sep. 2026.