SRITHANACHAI, I.; NIEMCHAROEN, S.; SANGWARANATEE, N.; AUTTAPHUT, P. DOPING EFFECT OF PT ON CAPACITANCE-VOLTAGE PROPERTIES OF METAL-SEMICONDUCTOR-METAL DEVICE. Suranaree Journal of Science and Technology, [S. l.], v. 27, n. 2, p. 030022(1–5), 2026. Disponível em: https://ph04.tci-thaijo.org/index.php/SUJST/article/view/14757. Acesso em: 16 sep. 2026.