KUMAR JHA, R. RECENT ADVANCES IN HFO2-BASED FERROELECTRIC FIELD - EFFECT TRANSISTORS: MATERIALS, INTERFACES, ARCHITECTURES, AND RELIABILITY - A REVIEW. Suranaree Journal of Science and Technology, [S. l.], v. 33, n. 4, p. 030395(1–14), 2026. DOI: 10.55766/sujst11268. Disponível em: https://ph04.tci-thaijo.org/index.php/SUJST/article/view/11268. Acesso em: 15 sep. 2026.